features trenchfet power mosfet 175 c junction temperature pwm optimized 100% r g tested applications high-side core dc/dc ? desktop ? server ddr dc/dc converter SUM55N03-16P vishay siliconix new product document number: 72632 s-40465?rev. a, 15-mar-04 www.vishay.com 1 n-channel 30-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 30 0.016 @ v gs = 10 v 55 30 0.024 @ v gs = 4.5 v 45 d g s n-channel mosfet drain connected to tab to-263 s d g top view ordering information: SUM55N03-16P?e3 (lead free) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 55 continuous drain current (t j = 175 c) t c = 100 c i d 39 a pulsed drain current i dm 50 a avalanche current i ar 25 repetitive a valanche energy a l = 0.1 mh e ar 31.25 mj maximum power dissipation a t c = 25 c p d 93 b w maximum power dissipation a t a = 25 c d p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case r thjc 1.6 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
SUM55N03-16P vishay siliconix new product www.vishay.com 2 document number: 72632 s-40465?rev. a, 15-mar-04 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 30 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 30 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 30 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 15 a 0.0128 0.016 drain source on state resistance a r v gs = 10 v, i d = 15 a, t j = 125 c 0.025 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a, t j = 175 c 0.031 v gs = 4.5 v, i d = 10 a 0.019 0.024 forward transconductance a g fs v ds = 15 v, i d = 20 a 10 s dynamic b input capacitance c iss 1150 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 215 pf reverse transfer capacitance c rss 70 total gate charge b q g 17 26 gate-source charge b q gs v ds = 15 v, v gs = 10 v, i d = 50 a 5 nc gate-drain charge b q gd ds , gs , d 2.5 gate resistance r g 2.7 5.5 8.25 turn-on delay time b t d(on) 7 15 rise time b t r v dd = 15 v, r l = 0.3 20 30 ns turn-off delay time b t d(off) v dd = 15 v , r l = 0 . 3 i d 50 a, v gen = 10 v, r g = 2.5 25 40 ns fall time b t f 12 20 source-drain diode ratings and characteristics (t c = 25 c) c continuous current i s 55 a pulsed current i sm 50 a forward voltage a v sd i f = 20 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 25 70 ns peak reverse recovery current i rm i f = 40 a, di/dt = 100 a/ s 1.2 2.5 a reverse recovery charge q rr f 0.15 0.09 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. independent of operating temperature. c. guaranteed by design, not subject to production testing.
SUM55N03-16P vishay siliconix new product document number: 72632 s-40465?rev. a, 15-mar-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 300 600 900 1200 1500 0 6 12 18 24 30 0 2 4 6 8 10 0 3 6 9 12 15 18 0 10 20 30 40 50 60 0 5 10 15 20 25 30 0.0000 0.0100 0.0200 0.0300 0.0400 0.0500 0 102030405060 0 10 20 30 40 50 60 0123456 0 10 20 30 40 50 60 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c 3 v t c = 125 c v ds = 15 v i d = 50 a v gs = 10 thru 5 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 4 v v gs = 4.5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d i d ? drain current (a) c rss
SUM55N03-16P vishay siliconix new product www.vishay.com 4 document number: 72632 s-40465?rev. a, 15-mar-04 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature 0.6 0.9 1.2 1.5 1.8 2.1 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 15 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) ) 0 30 32 34 36 38 40 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) (v) v (br)dss i d = 250 a
SUM55N03-16P vishay siliconix new product document number: 72632 s-40465?rev. a, 15-mar-04 www.vishay.com 5 thermal ratings 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 100 10 0.1 1 10 100 limited by r ds(on) 0.1 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c ? ambient t emperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s single pulse 0.05 0.02 1 10 ? 4
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